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Vishay General Semiconductor - Diodes Division VS-ENQ030L120S
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| IGBT Type | Trench |
| Configuration | Three Level Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 61 A |
| Power - Max | 216 W |
| Vce(on) (Max) @ Vge, Ic | 2.52V @ 15V, 30A |
| Current - Collector Cutoff (Max) | 230 µA |
| Input Capacitance (Cies) @ Vce | 3.34 nF @ 30 V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | EMIPAK-1B |
| Supplier Device Package | EMIPAK-1B |
| Base Product Number | ENQ030 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 98 |
IGBT Module Trench Three Level Inverter 1200 V 61 A 216 W Chassis Mount EMIPAK-1B
