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Vishay General Semiconductor - Diodes Division VS-GB100TP120N

VS-GB100TP120N


  • Manufacturer: AK-Nord GmbH
  • Chip 1 Group NO: VS-GB100TP120N
  • Price:
  • Datasheet: -
  • Description: VS-GB100TP120N(Kg)
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Details

Tags

Parameters
Mfr Vishay General Semiconductor - Diodes Division
Series -
Package Bulk
Product Status Obsolete
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 200 A
Power - Max 650 W
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 7.43 nF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case INT-A-Pak
Supplier Device Package INT-A-PAK
Base Product Number GB100
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names VSGB100TP120N
Standard Package 24
IGBT Module Half Bridge 1200 V 200 A 650 W Chassis Mount INT-A-PAK