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Vishay General Semiconductor - Diodes Division VS-GB150YG120NT
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| IGBT Type | NPT |
| Configuration | Full Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 182 A |
| Power - Max | 892 W |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 200A |
| Current - Collector Cutoff (Max) | 120 µA |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | ECONO3 4PACK |
| Base Product Number | GB150 |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 10 |
IGBT Module NPT Full Bridge 1200 V 182 A 892 W Chassis Mount ECONO3 4PACK
