Call Us: 1(8457) SAMSON8 (USA)

  • Twitter
  • facebook
  • WhatsApp
  • YouTube
banner_page

Vishay General Semiconductor - Diodes Division VS-GB400TH120N

VS-GB400TH120N


  • Manufacturer: AK-Nord GmbH
  • Chip 1 Group NO: VS-GB400TH120N
  • Price:
  • Datasheet: -
  • Description: VS-GB400TH120N(Kg)
If you need to check our product or price list, please leave your email and we will contact you within 24 hours. Clicking on the website skype will result in a faster response!

Details

Tags

Parameters
Mfr Vishay General Semiconductor - Diodes Division
Series -
Package Bulk
Product Status Obsolete
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 800 A
Power - Max 2604 W
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 400A (Typ)
Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 32.7 nF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)
Supplier Device Package Double INT-A-PAK
Base Product Number GB400
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names VSGB400TH120N
Standard Package 12
IGBT Module Half Bridge 1200 V 800 A 2604 W Chassis Mount Double INT-A-PAK