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Vishay General Semiconductor - Diodes Division VS-GB75SA120UP
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| IGBT Type | NPT |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 658 W |
| Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 75A |
| Current - Collector Cutoff (Max) | 250 µA |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Base Product Number | GB75 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | VSGB75SA120UP |
| Standard Package | 180 |
IGBT Module NPT Single 1200 V 658 W Chassis Mount SOT-227
