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Vishay General Semiconductor - Diodes Division VS-GT80DA120U
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | HEXFRED® |
| Package | Bulk |
| Product Status | Active |
| IGBT Type | Trench |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 139 A |
| Power - Max | 658 W |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 80A |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 4.4 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Base Product Number | GT80 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 10 |
IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227
