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Vishay Siliconix 2N6661-E3

2N6661-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: 2N6661-E3
  • Price:
  • Datasheet: PDF
  • Description: 2N6661-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 90 V
Current - Continuous Drain (Id) @ 25°C 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
FET Feature -
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-39
Package / Case TO-205AD, TO-39-3 Metal Can
Base Product Number 2N6661
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 100
N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39