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Vishay Siliconix 2N6661JTX02
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 90 V |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-39 |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Base Product Number | 2N6661 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 20 |
N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
