Parameters |
Mfr |
Vishay Siliconix |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
115mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
7.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
50 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
200mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-236 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Base Product Number |
2N7002 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
1,000 |
N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236