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Vishay Siliconix DG2032EDN-T1-GE4
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Switch Circuit | SPDT |
| Multiplexer/Demultiplexer Circuit | 2:1 |
| Number of Circuits | 2 |
| On-State Resistance (Max) | 3.1Ohm |
| Channel-to-Channel Matching (ΔRon) | 10mOhm |
| Voltage - Supply, Single (V+) | 1.8V ~ 5.5V |
| Voltage - Supply, Dual (V±) | - |
| Switch Time (Ton, Toff) (Max) | 40ns, 33ns |
| -3db Bandwidth | 221MHz |
| Charge Injection | -19.4pC |
| Channel Capacitance (CS(off), CD(off)) | - |
| Current - Leakage (IS(off)) (Max) | - |
| Crosstalk | -62dB @ 1MHz |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 12-VFQFN Exposed Pad |
| Supplier Device Package | 12-QFN (3x3) |
| Base Product Number | DG2032 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
| Standard Package | 2,500 |
2 Circuit IC Switch 2:1 3.1Ohm 12-QFN (3x3)
