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Vishay Siliconix IRF710PBF

IRF710PBF


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: IRF710PBF
  • Price: $1.11
  • Datasheet: PDF
  • Description: IRF710PBF(Kg)
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Details

Tags

Parameters
ECCN EAR99
HTSUS 8541.29.0095
Other Names *IRF710PBF
Standard Package 50
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRF710
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
N-Channel 400 V 2A (Tc) 36W (Tc) Through Hole TO-220AB