Parameters |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
*IRF710PBF |
Standard Package |
50 |
Mfr |
Vishay Siliconix |
Series |
- |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
400 V |
Current - Continuous Drain (Id) @ 25°C |
2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
3.6Ohm @ 1.2A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
17 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
170 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
36W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220AB |
Package / Case |
TO-220-3 |
Base Product Number |
IRF710 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
N-Channel 400 V 2A (Tc) 36W (Tc) Through Hole TO-220AB