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Vishay Siliconix IRF830AS

IRF830AS


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: IRF830AS
  • Price:
  • Datasheet: PDF
  • Description: IRF830AS(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IRF830
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names *IRF830AS
Standard Package 50
N-Channel 500 V 5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)