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Vishay Siliconix IRF9Z30

IRF9Z30


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: IRF9Z30
  • Price:
  • Datasheet: PDF
  • Description: IRF9Z30(Kg)
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Details

Tags

Parameters
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRF9
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names *IRF9Z30
Standard Package 1,000
Mfr Vishay Siliconix
Series -
P-Channel 50 V 18A (Tc) 74W (Tc) Through Hole TO-220AB