Parameters |
Mfr |
Vishay Siliconix |
Series |
- |
Package |
Tube |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
280mOhm @ 960mA, 10V |
Vgs(th) (Max) @ Id |
4V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs |
19 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
570 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
1.3W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
4-HVMDIP |
Package / Case |
4-DIP (0.300", 7.62mm) |
Base Product Number |
IRFD9020 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
*IRFD9020PBF |
Standard Package |
100 |
P-Channel 60 V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP