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Vishay Siliconix IRFD9113
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| Parameters | |
|---|---|
| Standard Package | 2,500 |
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 300mA, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD9113 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
P-Channel 60 V 600mA (Ta) Through Hole 4-HVMDIP
