Parameters | |
---|---|
Mfr | Vishay Siliconix |
Series | - |
Package | Tube |
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Base Product Number | IRFI9540 |
RoHS Status | RoHS non-compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | *IRFI9540G |
Standard Package | 1,000 |