Parameters |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
500mOhm @ 1.1A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
270 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
2W (Ta), 3.1W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-223 |
Package / Case |
TO-261-4, TO-261AA |
Base Product Number |
IRFL9014 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
*IRFL9014 |
Standard Package |
80 |
Mfr |
Vishay Siliconix |
Series |
- |
Package |
Tube |
Product Status |
Obsolete |
P-Channel 60 V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223