Parameters | |
---|---|
Mfr | Vishay Siliconix |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50 V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number | IRFR010 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | *IRFR010PBF |
Standard Package | 75 |