Parameters |
Mfr |
Vishay Siliconix |
Series |
- |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
4.4Ohm @ 1.2A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
18 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
350 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta), 42W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-251AA |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Base Product Number |
IRFUC20 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
*IRFUC20 |
Standard Package |
75 |
N-Channel 600 V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA