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Vishay Siliconix IRLD120PBF
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| Parameters | |
|---|---|
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRLD120 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | *IRLD120PBF |
| Standard Package | 100 |
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
