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Vishay Siliconix SI1011X-T1-GE3

SI1011X-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI1011X-T1-GE3
  • Price:
  • Datasheet: PDF
  • Description: SI1011X-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 640mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 4.5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 62 pF @ 6 V
FET Feature -
Power Dissipation (Max) 190mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490
Base Product Number SI1011
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
P-Channel 12 V 480mA (Ta) 190mW (Ta) Surface Mount SC-89-3