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Vishay Siliconix SI1022R-T1-GE3

SI1022R-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI1022R-T1-GE3
  • Price: $0.63
  • Datasheet: PDF
  • Description: SI1022R-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-75A
Package / Case SC-75, SOT-416
Base Product Number SI1022
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
N-Channel 60 V 330mA (Ta) 250mW (Ta) Surface Mount SC-75A