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Vishay Siliconix SI2319DS-T1-GE3
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2319 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 3,000 |
P-Channel 40 V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
