Call Us: 1(8457) SAMSON8 (USA)

  • Twitter
  • facebook
  • WhatsApp
  • YouTube
banner_page

Vishay Siliconix SI2343DS-T1-E3

SI2343DS-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI2343DS-T1-E3
  • Price: $0.66
  • Datasheet: PDF
  • Description: SI2343DS-T1-E3(Kg)
If you need to check our product or price list, please leave your email and we will contact you within 24 hours. Clicking on the website skype will result in a faster response!

Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 15 V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SI2343
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 53mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
P-Channel 30 V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)