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Vishay Siliconix SI3475DV-T1-GE3
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Cut Tape (CT) |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.61Ohm @ 900mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 50 V |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Base Product Number | SI3475 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
P-Channel 200 V 950mA (Tc) Surface Mount 6-TSOP
