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Vishay Siliconix SI3590DV-T1-E3

SI3590DV-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI3590DV-T1-E3
  • Price: $0.76
  • Datasheet: PDF
  • Description: SI3590DV-T1-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A, 1.7A
Rds On (Max) @ Id, Vgs 77mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Base Product Number SI3590
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Mosfet Array 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP