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Vishay Siliconix SI4409DY-T1-E3

SI4409DY-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI4409DY-T1-E3
  • Price:
  • Datasheet: PDF
  • Description: SI4409DY-T1-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 332 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 4.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4409
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
P-Channel 150 V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SOIC