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Vishay Siliconix SI4500BDY-T1-GE3

SI4500BDY-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI4500BDY-T1-GE3
  • Price:
  • Datasheet: PDF
  • Description: SI4500BDY-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series -
Package Cut Tape (CT)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.6A, 3.8A
Rds On (Max) @ Id, Vgs 20mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4500
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Mosfet Array 20V 6.6A, 3.8A 1.3W Surface Mount 8-SOIC