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Vishay Siliconix SI4622DY-T1-GE3

SI4622DY-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI4622DY-T1-GE3
  • Price:
  • Datasheet: PDF
  • Description: SI4622DY-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series SkyFET®, TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 16mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2458pF @ 15V
Power - Max 3.3W, 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4622
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Mosfet Array 30V 8A 3.3W, 3.1W Surface Mount 8-SOIC