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Vishay Siliconix SI4776DY-T1-GE3
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | SkyFET®, TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 11.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 521 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 4.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | SI4776 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 2,500 |
N-Channel 30 V 11.9A (Tc) 4.1W (Tc) Surface Mount 8-SOIC
