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Vishay Siliconix SI4913DY-T1-E3

SI4913DY-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI4913DY-T1-E3
  • Price:
  • Datasheet: PDF
  • Description: SI4913DY-T1-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.1A
Rds On (Max) @ Id, Vgs 15mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4913
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Mosfet Array 20V 7.1A 1.1W Surface Mount 8-SOIC