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Vishay Siliconix SI5424DC-T1-E3

SI5424DC-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI5424DC-T1-E3
  • Price:
  • Datasheet: PDF
  • Description: SI5424DC-T1-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
Base Product Number SI5424
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
N-Channel 30 V 6A (Tc) 2.5W (Ta), 6.25W (Tc) Surface Mount 1206-8 ChipFET™