Parameters |
Mfr |
Vishay Siliconix |
Series |
TrenchFET® |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
4.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
37mOhm @ 4.8A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
22 nC @ 4.5 V |
Vgs (Max) |
±8V |
FET Feature |
- |
Power Dissipation (Max) |
1.3W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
1206-8 ChipFET™ |
Package / Case |
8-SMD, Flat Lead |
Base Product Number |
SI5433 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
P-Channel 20 V 4.8A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™