Parameters |
Mfr |
Vishay Siliconix |
Series |
TrenchFET® |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
15mOhm @ 7.7A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
54 nC @ 8 V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
2100 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
3.1W (Ta), 31W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerPAK® ChipFET™ Single |
Package / Case |
PowerPAK® ChipFET™ Single |
Base Product Number |
SI5486 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
N-Channel 20 V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFET™ Single