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Vishay Siliconix SI5499DC-T1-E3

SI5499DC-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI5499DC-T1-E3
  • Price:
  • Datasheet: PDF
  • Description: SI5499DC-T1-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 8 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 4 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 6.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
Base Product Number SI5499
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
P-Channel 8 V 6A (Tc) 2.5W (Ta), 6.2W (Tc) Surface Mount 1206-8 ChipFET™