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Vishay Siliconix SI6562DQ-T1-E3

SI6562DQ-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI6562DQ-T1-E3
  • Price:
  • Datasheet: PDF
  • Description: SI6562DQ-T1-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Cut Tape (CT)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Base Product Number SI6562
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mosfet Array 20V 1W Surface Mount 8-TSSOP