Parameters | |
---|---|
HTSUS | 8541.21.0095 |
Standard Package | 3,000 |
Mfr | Vishay Siliconix |
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.6A |
Rds On (Max) @ Id, Vgs | 31mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 830mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
Base Product Number | SI6993 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |