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Vishay Siliconix SI7703EDN-T1-E3

SI7703EDN-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI7703EDN-T1-E3
  • Price:
  • Datasheet: PDF
  • Description: SI7703EDN-T1-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V
Vgs (Max) ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SI7703
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
P-Channel 20 V 4.3A (Ta) 1.3W (Ta) Surface Mount PowerPAK® 1212-8