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Vishay Siliconix SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI7900AEDN-T1-GE3
  • Price: $0.50
  • Datasheet: PDF
  • Description: SI7900AEDN-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
Base Product Number SI7900
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mosfet Array 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual