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Vishay Siliconix SI8409DB-T1-E1

SI8409DB-T1-E1


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI8409DB-T1-E1
  • Price: $1.11
  • Datasheet: PDF
  • Description: SI8409DB-T1-E1(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 46mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.47W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
Base Product Number SI8409
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
P-Channel 30 V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot