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Vishay Siliconix SI8497DB-T2-E1

SI8497DB-T2-E1


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI8497DB-T2-E1
  • Price: $0.21
  • Datasheet: PDF
  • Description: SI8497DB-T2-E1(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Rds On (Max) @ Id, Vgs 53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-microfoot
Package / Case 6-UFBGA
Base Product Number SI8497
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
P-Channel 30 V 13A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot