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Vishay Siliconix SI8499DB-T2-E1

SI8499DB-T2-E1


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI8499DB-T2-E1
  • Price: $0.69
  • Datasheet: PDF
  • Description: SI8499DB-T2-E1(Kg)
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Parameters
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 32mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-Micro Foot™ (1.5x1)
Package / Case 6-UFBGA
Base Product Number SI8499
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
P-Channel 20 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)