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Vishay Siliconix SI8900EDB-T2-E1
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1V @ 1.1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 10-UFBGA, CSPBGA |
| Supplier Device Package | 10-Micro Foot™ CSP (2x5) |
| Base Product Number | SI8900 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
Mosfet Array 20V 5.4A 1W Surface Mount 10-Micro Foot™ CSP (2x5)
