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Vishay Siliconix SI8902EDB-T2-E1

SI8902EDB-T2-E1


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SI8902EDB-T2-E1
  • Price:
  • Datasheet: PDF
  • Description: SI8902EDB-T2-E1(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.9A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1V @ 980µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-MICRO FOOT®CSP
Supplier Device Package 6-Micro Foot™ (2.36x1.56)
Base Product Number SI8902
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mosfet Array 20V 3.9A 1W Surface Mount 6-Micro Foot™ (2.36x1.56)