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Vishay Siliconix SIA108DJ-T1-GE3

SIA108DJ-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIA108DJ-T1-GE3
  • Price: $0.88
  • Datasheet: PDF
  • Description: SIA108DJ-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA108
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
N-Channel 80 V 6.6A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6