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Vishay Siliconix SIA450DJ-T1-GE3

SIA450DJ-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIA450DJ-T1-GE3
  • Price:
  • Datasheet: PDF
  • Description: SIA450DJ-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V
Current - Continuous Drain (Id) @ 25°C 1.52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 2.9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.04 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 167 pF @ 120 V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 15W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA450
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
N-Channel 240 V 1.52A (Tc) 3.3W (Ta), 15W (Tc) Surface Mount PowerPAK® SC-70-6