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Vishay Siliconix SIA920DJ-T1-GE3

SIA920DJ-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIA920DJ-T1-GE3
  • Price:
  • Datasheet: PDF
  • Description: SIA920DJ-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 27mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 4V
Power - Max 7.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA920
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mosfet Array 8V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual