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Vishay Siliconix SIE848DF-T1-E3

SIE848DF-T1-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIE848DF-T1-E3
  • Price:
  • Datasheet: PDF
  • Description: SIE848DF-T1-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 138 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 15 V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)
Base Product Number SIE848
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
N-Channel 30 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)