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Vishay Siliconix SIF912EDZ-T1-E3
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 7.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.6W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 2x5 |
| Supplier Device Package | PowerPAK® (2x5) |
| Base Product Number | SIF912 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
Mosfet Array 30V 7.4A 1.6W Surface Mount PowerPAK® (2x5)
