Parameters |
Mfr |
Vishay Siliconix |
Series |
E |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
800 V |
Current - Continuous Drain (Id) @ 25°C |
5.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
940mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
44 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
827 pF @ 100 V |
FET Feature |
- |
Power Dissipation (Max) |
31W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220 Full Pack |
Package / Case |
TO-220-3 Full Pack |
Base Product Number |
SIHA6 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1,000 |
N-Channel 800 V 5.4A (Tc) 31W (Tc) Through Hole TO-220 Full Pack